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Titolo:
PREPARATION AND CHARACTERIZATION OF PHOSPHORUS-DOPED ALUMINUM-OXIDE THIN-FILMS
Autore:
TIITTA M; NYKANEN E; SOININEN P; NIINISTO L; LESKELA M; LAPPALAINEN R;
Indirizzi:
HELSINKI UNIV TECHNOL,LAB INORGAN & ANALYT CHEM,POB 6100 FIN-02015 ESPOO FINLAND HELSINKI UNIV TECHNOL,LAB INORGAN & ANALYT CHEM FIN-02015 ESPOO FINLAND UNIV HELSINKI,DEPT CHEM FIN-00014 HELSINKI FINLAND UNIV HELSINKI,DEPT PHYS FIN-00014 HELSINKI FINLAND
Titolo Testata:
Materials research bulletin
fascicolo: 9, volume: 33, anno: 1998,
pagine: 1315 - 1323
SICI:
0025-5408(1998)33:9<1315:PACOPA>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
ATOMIC LAYER EPITAXY; CHEMICAL VAPOR-DEPOSITION; GROWTH; AL2O3;
Keywords:
THIN FILMS; OXIDES; VAPOR DEPOSITION; INFRARED SPECTROSCOPY; X-RAY DIFFRACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
30
Recensione:
Indirizzi per estratti:
Citazione:
M. Tiitta et al., "PREPARATION AND CHARACTERIZATION OF PHOSPHORUS-DOPED ALUMINUM-OXIDE THIN-FILMS", Materials research bulletin, 33(9), 1998, pp. 1315-1323

Abstract

Aluminum oxide thin films with or without phosphorus doping were deposited by the atomic layer epitaxy (ALE) technique. The source materials for aluminum were aluminum chloride and aluminum n-propoxide and foroxygen, water and 2-methyl-2-propanol. The phosphorus source was P2O5. The films were analyzed by Rutherford backscattering spectroscopy (RBS), nuclear resonance broadening (NRB), X-ray diffraction (XRD), X-ray fluorescence (XRF), and Fourier transform infrared (FTIR) spectroscopy for chemical composition and structure. The results show that phosphorus can be incorporated in a wide range of concentration levels intothe aluminum oxide layers. Greater than 20 wt% doping, however, led to the formation of crystalline aluminum phosphate when the oxygen source was 2-methyl-2-propanol. The phosphorus doping also increased the growth and H3PO4 etch rates of the films. (C) 1998 Elsevier Science Ltd.

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Documento generato il 25/09/20 alle ore 22:17:30