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Titolo:
DISTRIBUTION OF BELOW-GAP STATES IN UNDOPED GAAS ALGAAS QUANTUM-WELLSREVEALED BY 2-WAVELENGTH EXCITED PHOTOLUMINESCENCE/
Autore:
HOSHINO K; KIMURA H; UCHIDA T; KAMATA N; YAMADA K; NISHIOKA M; ARAKAWA Y;
Indirizzi:
SAITAMA UNIV,FAC ENGN,DEPT FUNCT MAT SCI,255 SHIMO OHKUBO URAWA SAITAMA 338 JAPAN SAITAMA UNIV,FAC ENGN,DEPT FUNCT MAT SCI URAWA SAITAMA 338 JAPAN UNIV TOKYO,INST IND SCI,MINATO KU TOKYO 106 JAPAN
Titolo Testata:
Journal of luminescence
fascicolo: 1, volume: 79, anno: 1998,
pagine: 39 - 46
SICI:
0022-2313(1998)79:1<39:DOBSIU>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
GAAS;
Keywords:
PHOTOLUMINESCENCE; BELOW-GAP EXCITATION; NONRADIATIVE RECOMBINATION; QUANTUM WELLS; GAAS/ALGAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
K. Hoshino et al., "DISTRIBUTION OF BELOW-GAP STATES IN UNDOPED GAAS ALGAAS QUANTUM-WELLSREVEALED BY 2-WAVELENGTH EXCITED PHOTOLUMINESCENCE/", Journal of luminescence, 79(1), 1998, pp. 39-46

Abstract

The spatial distribution of below-gap states in undoped GaAs/AlGaAs quantum-well structures and their effect on the luminescence intensity has been determined by a spectroscopic measurement of two-wavelength excited photoluminescence. Tuning the photon energy of above-gap excitation revealed that these below-gap states were formed neither in the GaAs well layers nor at the GaAs/AlGaAs hetero-interface, but in the AlGaAs barrier layers. The properties of below-gap states in AlGaAs werefound to be strongly dependent on growth temperature. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 06:58:09