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Titolo:
MICROSTRUCTURAL CHARACTERIZATION OF NANOCRYSTALLINE GAN PREPARED BY DETONATIONS OF GALLIUM AZIDES
Autore:
FRANK AC; STOWASSER F; STARK O; KWAK HT; SUSSEK H; RUPP A; PRITZKOW H; AMBACHER O; GIERSIG M; FISCHER RA;
Indirizzi:
RUHR UNIV BOCHUM,LEHRSTUHL ANORGAN CHEM 2 D-44780 BOCHUM GERMANY KOOK MIN UNIV,DEPT CHEM SEOUL 136702 SOUTH KOREA UNIV HEIDELBERG,INST ANORGAN CHEM D-69120 HEIDELBERG GERMANY TECH UNIV MUNICH,WALTER SCHOTTKY INST D-85748 MUNICH GERMANY HAHN MEITNER INST BERLIN GMBH D-14109 BERLIN GERMANY
Titolo Testata:
Advanced materials for optics and electronics
fascicolo: 3, volume: 8, anno: 1998,
pagine: 135 - 146
SICI:
1057-9257(1998)8:3<135:MCONGP>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
SINGLE-SOURCE PRECURSOR; THIN-FILMS; NITRIDE; REDUCTION;
Keywords:
GALLIUM NITRIDE; NANOCRYSTALLITES; DETONATION; GALLIUM AZIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
38
Recensione:
Indirizzi per estratti:
Citazione:
A.C. Frank et al., "MICROSTRUCTURAL CHARACTERIZATION OF NANOCRYSTALLINE GAN PREPARED BY DETONATIONS OF GALLIUM AZIDES", Advanced materials for optics and electronics, 8(3), 1998, pp. 135-146

Abstract

High quality nanoscale, phase-pure hexagonal gallium nitride (GaN) crystallites have been synthesized by the thermal induced detonation of molecular precursors of the type (R3N)Ga(N-3)(3) (R = CH3, C2H5, etc.). The method allows the control of the particle size regime from 2 to about 1000 nm. X-ray diffraction and Rietveld simulations revealed an anisotropic platelet-like shape of the particles. The obtained GaN material was as well characterized by transmission electron microscopy and electron diffraction, photoluminescence spectroscopy, SEM, in, RAMAN, thermal gas effusion/mass spectrometry, thermal analysis, elemental analysis. Gas absorption measurements (BET method) showed a specific surface area of about 90 m(2).g(-1). (C) 1998 John Wiley & Sons, Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 13:05:50