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Titolo:
THE COMPLEX-FORMATION OF RIPPLES DURING DEPTH PROFILING OF SI WITH LOW-ENERGY, GRAZING OXYGEN BEAMS
Autore:
JIANG ZX; ALKEMADE PFA;
Indirizzi:
DELFT UNIV TECHNOL,DELFT INST MICROELECT & SUBMICRON TECHNOL,DEPT APPL PHYS,LORENTZWEG 1 NL-2628 CJ DELFT NETHERLANDS
Titolo Testata:
Applied physics letters
fascicolo: 3, volume: 73, anno: 1998,
pagine: 315 - 317
SICI:
0003-6951(1998)73:3<315:TCORDD>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
ION-BOMBARDMENT; ROUGHENING INSTABILITY; SURFACE; TOPOGRAPHY; GAAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
Z.X. Jiang e P.F.A. Alkemade, "THE COMPLEX-FORMATION OF RIPPLES DURING DEPTH PROFILING OF SI WITH LOW-ENERGY, GRAZING OXYGEN BEAMS", Applied physics letters, 73(3), 1998, pp. 315-317

Abstract

Surface roughening of Si under low-energy (0.5 -2.0 keV) O-2(+) bombardment at incidence angles between 45 degrees and 80 degrees has been studied. Surface roughening occurred already at an erosion depth of only a few tens of nanometers. It was found that there were distinctly two angular ranges for sub-keV beams where roughening was strong, and two ranges where it was insignificant. The transition between the different ranges call be very sharp. These observations cannot be explainedby the current models for surface roughening. Instead, it is believedthat it is the combined sputtering rate dependence on both the surface topography and the oxygen content that determines the occurrence of roughening. (C) 1998 American Institute of Physics.

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Documento generato il 27/11/20 alle ore 02:21:32