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Titolo:
GROWTH-MODE MODIFICATION OF BI ON CDTE(111)A USING TE MONOLAYER DEPOSITION
Autore:
CHO SL; DIVENERE A; WONG GK; KETTERSON JB; MEYER JR; HONG JI;
Indirizzi:
NORTHWESTERN UNIV,DEPT PHYS & ASTRON EVANSTON IL 60208 NORTHWESTERN UNIV,MAT RES CTR EVANSTON IL 60208 USN,RES LAB WASHINGTON DC 20375 NORTHWESTERN UNIV,DEPT MAT SCI & ENGN EVANSTON IL 60208
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 4, volume: 58, anno: 1998,
pagine: 2324 - 2328
SICI:
0163-1829(1998)58:4<2324:GMOBOC>2.0.ZU;2-E
Fonte:
ISI
Lingua:
ENG
Soggetto:
MOLECULAR-BEAM EPITAXY; SURFACTANT-MEDIATED GROWTH; STRAIN RELIEF; GE; SI(001); SI(111); SUPERLATTICES; COVERAGE; SI; SB;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
36
Recensione:
Indirizzi per estratti:
Citazione:
S.L. Cho et al., "GROWTH-MODE MODIFICATION OF BI ON CDTE(111)A USING TE MONOLAYER DEPOSITION", Physical review. B, Condensed matter, 58(4), 1998, pp. 2324-2328

Abstract

Bi deposited on the CdTe(lll)A (Cd-terminated) surface grows by three-dimensional (3D) islanding, while Bi deposited on the CdTe(lll)B (Te-terminated) grows layer-by-layer. However, introducing a Te monolayer (ML) on the CdTe(lll)A surface reduces the interfacial energy, therebychanging the growth mode of Bi from 3D islandlike to layer-by-layer growth. The Te ML remains where it is deposited, which differs from thegrowth mode in which the surface-active agent floats on the growing surface. By incorporating appropriate Te ML's, Bi/CdTe superlattices with sharper interfaces were observed. These superlattices were characterized by x-ray diffraction and transmission electron microscopy.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 23/11/20 alle ore 21:35:06