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Titolo:
ATOMIC LAYER EPITAXY GROWTH OF TIN THIN-FILMS FROM TII4 AND NH3
Autore:
RITALA M; LESKELA M; RAUHALA E; JOKINEN J;
Indirizzi:
UNIV HELSINKI,DEPT CHEM FIN-00014 HELSINKI FINLAND UNIV HELSINKI,ACCELERATOR LAB FIN-00014 HELSINKI FINLAND
Titolo Testata:
Journal of the Electrochemical Society
fascicolo: 8, volume: 145, anno: 1998,
pagine: 2914 - 2920
SICI:
0013-4651(1998)145:8<2914:ALEGOT>2.0.ZU;2-C
Fonte:
ISI
Lingua:
ENG
Soggetto:
CHEMICAL-VAPOR-DEPOSITION; LOW-TEMPERATURE DEPOSITION; LARGE-SCALE INTEGRATION; TITANIUM; NITRIDE; OVERLAYERS; BARRIER; OXIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
48
Recensione:
Indirizzi per estratti:
Citazione:
M. Ritala et al., "ATOMIC LAYER EPITAXY GROWTH OF TIN THIN-FILMS FROM TII4 AND NH3", Journal of the Electrochemical Society, 145(8), 1998, pp. 2914-2920

Abstract

TiN thin films were grown by atomic layer epitaxy using titanium tetraiodide (TiI4) and ammonia (NH3) as precursors. The films were characterized with Rutherford backscattering spectrometry, time-of-flight elastic recoil detection analysis, energy dispersive X-ray spectroscopy, X-ray diffraction: scanning electron microscopy, and resistivity measurements. Both the growth rate and Trim quality were markedly dependenton the growth temperature. As the temperature was increased from 400 to 500 degrees C the growth rate increased from 0.12 to 0.30 Angstrom/cycle, and the resistivity decreased from 380 to 70 mu Ohm cm. Also, the oxygen content decreased with increasing temperature being about 10atom % in the films grown at 475 to 500 degrees C. The iodine contents were below 0.5 atom %.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/09/20 alle ore 11:41:57