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Titolo:
DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON UNDER INTERMITTENT SUBSTRATE BIAS
Autore:
SAKIKAWA N; SHISHIDA Y; MIYAZAKI S; HIROSE M;
Indirizzi:
HIROSHIMA UNIV,DEPT ELECT ENGN,1-4-1 KAGAMIYAMA HIGASHIHIROSHIMA 7398527 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 7A, volume: 37, anno: 1998,
pagine: 774 - 777
SICI:
0021-4922(1998)37:7A<774:DOHAUI>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; GLOW-DISCHARGE; GROWTH; PLASMA; FILMS;
Keywords:
HYDROGENATED AMORPHOUS SILICON; PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION; TRIODE REACTOR; INTERMITTENT SUBSTRATE BIAS; ION-INDUCED REACTION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
N. Sakikawa et al., "DEPOSITION OF HYDROGENATED AMORPHOUS-SILICON UNDER INTERMITTENT SUBSTRATE BIAS", JPN J A P 2, 37(7A), 1998, pp. 774-777

Abstract

Hydrogenated amorphous silicon (a-Si:H) was deposited using a triode-type reactor to which an intermittent substrate bias was applied. The total bonded hydrogen content was reduced to 2.9 at.% at a substrate temperature of 200 degrees C, and a photosensitivity of 5x10(6) with a dark conductivity of 7x10(-11) S/cm was obtained. The defect density measured using a constant photocurrent method was as low as 8.5x10(15) cm(-3). It is suggested that the ion flux intermittently impinging onto the growing film surface causes ion-induced hydrogen desorption and a-Si:H network relaxation.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 23:29:45