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Titolo:
ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/
Autore:
BERA LK; RAY SK; MUKHOPADHYAY M; NAYAK DK; USAMI N; SHIRAKI Y; MAITI CK;
Indirizzi:
INDIAN INST TECHNOL,DEPT ELECT & ELECT COMMUN ENGN KHARAGPUR 721302 WBENGAL INDIA INDIAN INST TECHNOL,DEPT PHYS & METEOROL KHARAGPUR 721302 W BENGAL INDIA CHARTERED SEMICOND MFG LTD SINGAPORE 738406 SINGAPORE ALTERA CORP SAN JOSE CA 95134 UNIV TOKYO,RCAST TOKYO 153 JAPAN
Titolo Testata:
IEEE electron device letters
fascicolo: 8, volume: 19, anno: 1998,
pagine: 273 - 275
SICI:
0741-3106(1998)19:8<273:EONNPG>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
THERMAL NITRIDATION; SILICON; MOBILITY; OXIDES; FILMS;
Keywords:
OXYNITRIDE; STRAINED-SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
L.K. Bera et al., "ELECTRICAL-PROPERTIES OF N2O NH3 PLASMA GROWN OXYNITRIDE ON STRAINED-SI/", IEEE electron device letters, 19(8), 1998, pp. 273-275

Abstract

Growth of ultrathin (<100 Angstrom) oxynitride on strained-Si using microwave N2O and NH3 plasma is reported. X-ray photoelectron spectroscopy (XPS) results indicate a nitrogen-rich layer at the strained-Si/SiO2 interface. The electrical properties of oxynitrides have been characterized using a metal-insulator-semiconductor (MIS) structure. A moderately low value of insulator charge density (6.1 x 10(10) cm(-2)) hasbeen obtained for NH3 plasma treated N2O oxide sample. Nitrided oxideshows a larger breakdown voltage and an improved charge trapping properties under Fowler-Nordheim (F-N) constant current stress.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/07/20 alle ore 16:56:26