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Titolo:
ANALYSIS OF HIGH-RATE A-SI-H DEPOSITION IN A VHF PLASMA
Autore:
HEINTZE M; ZEDLITZ R; BAUER GH;
Indirizzi:
UNIV STUTTGART,INST PHYS ELEKTR,PFAFFENWALDRING 47 D-70569 STUTTGART 80 GERMANY
Titolo Testata:
Journal of physics. D, Applied physics
fascicolo: 10, volume: 26, anno: 1993,
pagine: 1781 - 1786
SICI:
0022-3727(1993)26:10<1781:AOHADI>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
HYDROGENATED AMORPHOUS-SILICON; CHEMICAL VAPOR-DEPOSITION; THIN-FILM DEPOSITION; GLOW-DISCHARGES; RADIO-FREQUENCY; EXCITATION-FREQUENCY; ELECTRON-IMPACT; ION-BOMBARDMENT; SILANE; MICROWAVE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
47
Recensione:
Indirizzi per estratti:
Citazione:
M. Heintze et al., "ANALYSIS OF HIGH-RATE A-SI-H DEPOSITION IN A VHF PLASMA", Journal of physics. D, Applied physics, 26(10), 1993, pp. 1781-1786

Abstract

VHF glow discharges are employed for high-rate a-Si:H deposition, maintaining good optoelectronic properties. A more efficient radical generation, either due to higher electron densities or an enhanced high-energy electron tail, is generally assumed as the mechanism. A VHF a-Si:H depositing plasma was investigated between 40 and 250 MHz by opticalemission spectroscopy, mass spectroscopy, ion energy measurements andelectrical impedance analysis. The present study shows that the increase of deposition rate with frequency is essentially due to enhanced ion flux to the growth surface, such that models of deposition kineticstaking into account only neutral species and neglecting the role of ions impinging on the substrate can therefore not be applied to VHF plasma deposition.

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Documento generato il 15/07/20 alle ore 06:52:55