Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF OXIDIZED ALN THIN-FILMS AT DIFFERENT TEMPERATURES
Autore:
CHOWDHURY EA; DASHIELL M; QIU G; OLOWOLAFE JO; JONCZYK R; SMITH D; BARNETT A; KOLODZEY J; UNRUH KM; SWANN CP; SUEHLE J; CHEN YA;
Indirizzi:
UNIV DELAWARE,DEPT ELECT & COMP ENGN NEWARK DE 19716 UNIV DELAWARE,DEPT PHYS & ASTRON NEWARK DE 19716 BARTOL RES INST,SHARP LAB NEWARK DE 19716 NIST GAITHERSBURG MD 20899 UNIV MARYLAND,CTR RELIABIL ENGN COLLEGE PK MD 20742
Titolo Testata:
Journal of electronic materials
fascicolo: 7, volume: 27, anno: 1998,
pagine: 918 - 922
SICI:
0361-5235(1998)27:7<918:SOAEOO>2.0.ZU;2-0
Fonte:
ISI
Lingua:
ENG
Soggetto:
OXIDATION; COATINGS; AL2O3;
Keywords:
ALN; ALUMINUM OXIDE; GATE INSULATORS; THERMAL OXIDATION; THIN FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
E.A. Chowdhury et al., "STRUCTURAL, OPTICAL AND ELECTRONIC-PROPERTIES OF OXIDIZED ALN THIN-FILMS AT DIFFERENT TEMPERATURES", Journal of electronic materials, 27(7), 1998, pp. 918-922

Abstract

We report on the properties of a novel insulator, AlO:N for application in semiconductors produced by thermally oxidizing AlN thin films. The process steps were similar to those used for SiO2, creating the possibility of a new technology for metal-insulator-semiconductor field effect devices and integrated circuits. Thin films of AlN were deposited by radio-frequency magnetron reactive sputtering on p-type silicon or fused quartz substrates. As-deposited AlN film thickness ranged from0.05 to 0.7 mu m, with polycrystalline structure revealed by x-ray diffraction. Oxidation was performed under O-2 flow at 800 to 1100 degrees C for 1-4 h. AlN films were oxidized partially or fully into Al2O3,depending on initial thickness, oxidation temperature and time. X-raydiffraction indicates the presence of several phases of Al2O3 at 1000degrees C, whereas at 1100 degrees C, only the alpha-Al2O3 phase was found. Considering the importance of surface field effect device applications, the surfaces of oxidized films were examined with atomic force microscopy in air, and a clear change was observed in the surface structure of the oxidized film from that of as-deposited ALN films. Capacitance-voltage measurements of metal-oxide-semiconductor structures yielded a dielectric constant of AlO:N between 8-12 and a net oxide-trapped-charge density of similar to 10(11) cm(-2). Using Fourier transform infrared spectrometry transmittance and reflectance, some alpha-Al2O3 modes were observed. In this paper, we describe the general properties of the oxide thin films, bulk and interface, at different temperatures.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 09:53:49