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Titolo:
COPPER DIFFUSION IN AMORPHOUS-GERMANIUM
Autore:
DOYLE JP; KUZNETSOV AY; SVENSSON BG;
Indirizzi:
ROYAL INST TECHNOL S-16440 KISTA SWEDEN ROYAL INST TECHNOL S-16440 KISTA SWEDEN RUSSIAN ACAD SCI,INST MICROELECT TECHNOL CHERNOGOLOVKA 142432 MOSCOW REGION RUSSIA
Titolo Testata:
Journal of vacuum science & technology. A. Vacuum, surfaces, and films
fascicolo: 4, volume: 16, anno: 1998,
pagine: 2604 - 2607
SICI:
0734-2101(1998)16:4<2604:CDIA>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Doyle et al., "COPPER DIFFUSION IN AMORPHOUS-GERMANIUM", Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(4), 1998, pp. 2604-2607

Abstract

The diffusion coefficient of copper in amorphous germanium is estimated to be larger than 3 x 10(-11) cm(2) s(-1) and the solubility to be similar to 7 x 10(18) cm(-3) at 200 degrees C as determined from secondary mass spectrometry. The observed solubility Limit is more than eight orders of magnitude greater than that in crystalline germanium and the enthalpy of a solution of copper in amorphous germanium is estimated to be as low as 0.05 eV in the range of 20-200 degrees C. Copper isobserved to diffuse more readily in amorphous germanium than in amorphous silicon, with an activation enthalpy as low as similar to 0.5 eV in the range of 20-200 degrees C. Interstitial diffusion is assumed toprevail and the trapping enthalpy of defects retarding the motion is found to be significantly lower in amorphous germanium (0.25 +/- 0.15 eV) compared to that in amorphous silicon (similar to 0.8 eV). (C) 1998 American Vacuum Society. [S0734-2101(98)00204-8].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 25/10/20 alle ore 11:07:50