Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
OPTICAL AND ELECTRICAL-PROPERTIES OF NANO-CRYSTALLINE GAN THIN-FILMS AND THEIR APPLICATION FOR THIN-FILM-TRANSISTOR
Autore:
KOBAYASHI S; NONOMURA S; USHIKOSHI K; ABE K; NISHIO M; FURUKAWA H; GOTOH T; NITTA S;
Indirizzi:
GIFU UNIV,DEPT ELECT & COMP ENGN,FAC ENGN,1-1 YANAGIDO GIFU 50111 JAPAN
Titolo Testata:
Journal of crystal growth
, volume: 190, anno: 1998,
pagine: 749 - 752
SICI:
0022-0248(1998)190:<749:OAEONG>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Keywords:
NANO-CRYSTALLINE GAN THIN FILM; VOLUME FRACTION OF NANO-CRYSTAL; BOTTOM GATE TYPE NC-GAN TFT; TOP GATE TYPE NC-GAN TFT; FIELD EFFECT MOBILITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
6
Recensione:
Indirizzi per estratti:
Citazione:
S. Kobayashi et al., "OPTICAL AND ELECTRICAL-PROPERTIES OF NANO-CRYSTALLINE GAN THIN-FILMS AND THEIR APPLICATION FOR THIN-FILM-TRANSISTOR", Journal of crystal growth, 190, 1998, pp. 749-752

Abstract

Application of a nano-crystalline GaN to thin-film transistors is demonstrated. Two types of TFT structures, a bottom gate type and a top gate type, are examined. The held effect mobilities of the former and the latter type TFTs were 6 x 10(-2) and 19 cm(2)/V s: respectively. There results are explained by the high-volume fraction of nano-crystal and the small deep gap state density at the free surface of nano-crystalline films from experimental results of structural, optical and electrical measurements. It is demonstrated that the nc-GaN TFT performance is not influenced by white light irradiation of 1.2 mW/cm(2) except for a slight increase in the off-current. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 26/09/20 alle ore 11:45:21