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Titolo:
SIMULATING RADIATION RELIABILITY WITH BERT
Autore:
PAVAN P; TU R; MINAMI E; LUM G; KO PK; HU CM;
Indirizzi:
UNIV MODENA,DIPARTIMENTO SCI INGN I-41100 MODENA ITALY UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI BERKELEY CA 94720
Titolo Testata:
Microelectronics
fascicolo: 6, volume: 26, anno: 1995,
pagine: 627 - 633
SICI:
0026-2692(1995)26:6<627:SRRWB>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
DEVICES; MODEL;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
P. Pavan et al., "SIMULATING RADIATION RELIABILITY WITH BERT", Microelectronics, 26(6), 1995, pp. 627-633

Abstract

This paper describes a simulator which can be used to study the effects on circuit behaviour of two radiation phenomena: Single Event Upset(SEU) and total-dose radiation effects. The core of the device is BERT (BErkeley Reliability Tools), an IC reliability simulator. The SEU simulator uses an established methodology, but a novel choice of sensitive nodes is made, which allows a fast simulation of very large digital circuits. The total-dose simulator predicts circuit behaviour after a user-specified radiation dose using an ordinary circuit simulator, such as SPICE. Simulation results are compared to actual experimental data.

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Documento generato il 23/09/20 alle ore 08:18:23