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Titolo:
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF POLYSILANES
Autore:
KAMATA N; AIHARA S; ISHIZAKA W; UMEDA M; TERUNUMA D; YAMADA K; FURUKAWA S;
Indirizzi:
SAITAMA UNIV,DEPT FUNCT MAT SCI URAWA SAITAMA 338 JAPAN KYUSHU INST TECHNOL,DEPT COMP SCI & ELECT IIZUKA FUKUOKA 820 JAPAN
Titolo Testata:
Journal of non-crystalline solids
, volume: 230, anno: 1998,
parte:, A
pagine: 538 - 542
SICI:
0022-3093(1998)230:<538:TPAEP>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON; ORIENTATION; FILMS;
Keywords:
PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; POLYSILANES; INTERNAL QUANTUM EFFICIENCY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
N. Kamata et al., "TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE AND ELECTROLUMINESCENCE PROPERTIES OF POLYSILANES", Journal of non-crystalline solids, 230, 1998, pp. 538-542

Abstract

We have determined an absolute internal quantum efficiency (eta(int))of various alkyl- and phenyl-based polysilanes by photoluminescence (PL) in the temperature range between 10 and 300 K. Larger eta(int) have been obtained usually in dialkyl-based polysilanes (e.g., 90% at 10 K and 27% at 300 K for polydihexylsilane (PDHS)). The smaller eta(int)Of polymethylphenylsilane (PMPS) turned out to be due to the resonantenergy-transfer between main- and side-chains. By introducing branching into Si main-chain in the PMPS, the effect of electronic delocalization on the luminescence characteristics has been investigated. A polydimethylsilane (PDMS) deposited on an indium tin oxide (ITO)-covered glass was electroluminesced (EL) at both 77 and 300 K, indicating a possibility for light emitting applications. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 02/04/20 alle ore 18:23:31