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Titolo:
THE ENERGY BARRIER FOR ELECTRON TRAPPING IN ALXGA1-XAS
Autore:
SCALVI LVA; MINAMI E;
Indirizzi:
UNESP,DEPT FIS,CP 473 BR-17033 BAURU SP BRAZIL
Titolo Testata:
Physica status solidi. a, Applied research
fascicolo: 1, volume: 139, anno: 1993,
pagine: 145 - 152
SICI:
0031-8965(1993)139:1<145:TEBFET>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
DX-CENTER; NEGATIVE-U; GAAS; SEMICONDUCTORS; ALLOYS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
L.V.A. Scalvi e E. Minami, "THE ENERGY BARRIER FOR ELECTRON TRAPPING IN ALXGA1-XAS", Physica status solidi. a, Applied research, 139(1), 1993, pp. 145-152

Abstract

Transient decay of persistent photoconductivity measurements are carried out in samples of different compositions. The capture barrier for electron trapping by DX centers is obtained using a method which employs the Brooks-Herring equation for the electronic mobility. The effectof polarization of the screening cloud is analysed using Takimoto's potential and specifies the limits of applicability of the Brooks-Herring equation in AlxGa1-xAs.

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Documento generato il 23/09/20 alle ore 08:53:15