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Titolo:
A FLUORINE-RELATED PASSIVATION LAYER ON ETCHED AL-CU (1-PERCENT) ALLOY SURFACES ON SILICON AFTER SF6 PLASMA TREATMENTS
Autore:
BAEK KH; YOON YS; PARK JM; KWON KH; KIM CI; NAM KS;
Indirizzi:
ELECT & TELECOMMUN RES INST,YUSONG POB 106 TAEJON 305600 SOUTH KOREA HANSEO UNIV,DEPT ELECT ENGN CHUNGNAM 356820 SOUTH KOREA ANYONG UNIV,DEPT ELECT ENGN ANYANG SI 430714 KYUNGGI DO SOUTH KOREA
Titolo Testata:
Materials letters
fascicolo: 3-4, volume: 35, anno: 1998,
pagine: 183 - 187
SICI:
0167-577X(1998)35:3-4<183:AFPLOE>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
CORROSION; FILMS;
Keywords:
AL-CU; SEMICONDUCTOR; SILICON; CORROSION; SF6 TREATMENT; FLUORINE-RELATED COMPOUNDS; PASSIVATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
9
Recensione:
Indirizzi per estratti:
Citazione:
K.H. Baek et al., "A FLUORINE-RELATED PASSIVATION LAYER ON ETCHED AL-CU (1-PERCENT) ALLOY SURFACES ON SILICON AFTER SF6 PLASMA TREATMENTS", Materials letters, 35(3-4), 1998, pp. 183-187

Abstract

After etching AI-Cu alloy films on Si using a SiCl4/Cl-2/He/CHF3 plasma, a corrosion phenomenon on the metal surface was studied. In the AI-Cu alloy system, corrosion occurs rapidly on the etched surface by residual chlorine atoms. To prevent the corrosion, an SF6 plasma treatment subsequent to etching has been carried out. A passivation layer is formed by fluorine-related compounds on the etched AL-Cu surface afterthe SF6 treatment, and the layer effectively suppresses the corrosionon the surface as the SF6 treatment pressure increases. The corrosioncould be successfully suppressed with the SF6 treatment at a total pressure of 300 mTorr. (C) 1998 Elsevier Science B.V. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/11/20 alle ore 04:38:19