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Titolo:
HRTEM STUDY OF STRAINED SI GE MULTILAYERS
Autore:
ROMEO M; UHLAQBOUILLET C; DEVILLE JP; WERCKMANN J; EHRET G; CHELLY R; DENTEL D; ANGOT T; BISCHOFF JL;
Indirizzi:
IPCMS,23 RUE LOESS F-67037 STRASBOURG FRANCE IPCMS F-67037 STRASBOURG FRANCE LPSE F-68093 MULHOUSE FRANCE
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 319, anno: 1998,
pagine: 168 - 171
SICI:
0040-6090(1998)319:1-2<168:HSOSSG>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
LAYER;
Keywords:
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MULTILAYERS; SIGE; IMAGE TREATMENT; STRAIN; RELAXATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
13
Recensione:
Indirizzi per estratti:
Citazione:
M. Romeo et al., "HRTEM STUDY OF STRAINED SI GE MULTILAYERS", Thin solid films, 319(1-2), 1998, pp. 168-171

Abstract

Deformation in Si/Ge strained multilayers has been characterised by HRTEM. The HRTEM strain profile determined by image treatment has been used to compare two growth techniques: Hot wire assisted gas source and ultra high vacuum molecular beam epitaxy. We have shown that for thefirst technique, germanium layers are highly strained. This is probably due to the incorporation of atomic hydrogen which would prevent relaxation by stacking faults formation. (C) 1998 Published by Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 04/12/20 alle ore 20:02:40