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Titolo:
MOLECULAR-BEAM EPITAXIAL-GROWTH AND PERFORMANCE OF HGCDTE-BASED SIMULTANEOUS-MODE 2-COLOR DETECTORS
Autore:
RAJAVEL RD; JAMBA DM; JENSEN JE; WU OK; BREWER PD; WILSON JA; JOHNSON JL; PATTEN EA; KOSAI K; CAULFIELD JT; GOETZ PM;
Indirizzi:
HRL LABS MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of electronic materials
fascicolo: 6, volume: 27, anno: 1998,
pagine: 747 - 751
SICI:
0361-5235(1998)27:6<747:MEAPOH>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Keywords:
HGCDTE; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY (MBE); MULTISPECTRAL DETECTORS; 2-COLOR DETECTORS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
15
Recensione:
Indirizzi per estratti:
Citazione:
R.D. Rajavel et al., "MOLECULAR-BEAM EPITAXIAL-GROWTH AND PERFORMANCE OF HGCDTE-BASED SIMULTANEOUS-MODE 2-COLOR DETECTORS", Journal of electronic materials, 27(6), 1998, pp. 747-751

Abstract

Molecular beam epitaxy was employed for the growth of HgCdTe-based n-p(+)-n device structures on (211)B oriented CdZnTe substrates. The device structures were processed as mesa isolated diodes, and operated asback-to-back diodes for the simultaneous detection of two closely spaced sub-bands in the mid-wave infrared spectrum. The devices were characterized by R,A values in excess of 5 x 10(5) Ohm cm(2) at 78K, at f/2 fov and quantum efficiencies greater than 70% in each band. Infraredimagery from a focal plane array with 128 x 128 pixels was acquired simultaneously from each band at temperatures between 77 to 180K, with no observable degradation in the image quality with increase in temperature.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 00:17:39