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Titolo:
MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE INFRARED FOCAL-PLANE ARRAYSON SILICON SUBSTRATES FOR MIDWAVE INFRARED APPLICATIONS
Autore:
DELYON TJ; RAJAVEL RD; VIGIL JA; JENSEN JE; WU OK; COCKRUM CA; JOHNSON SM; VENZOR GM; BAILEY SL; KASAI I; AHLGREN WL; SMITH MS;
Indirizzi:
HUGHES RES LABS,3011 MALIBU CANYON RD MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of electronic materials
fascicolo: 6, volume: 27, anno: 1998,
pagine: 550 - 555
SICI:
0361-5235(1998)27:6<550:MEOHIF>2.0.ZU;2-A
Fonte:
ISI
Lingua:
ENG
Soggetto:
DETECTOR STRUCTURES;
Keywords:
CDTE; CDTE/SI; FOCAL-PLANE ARRAYS (FPAS); HETEROEPITAXY; HGCDTE; HGCDTE/SI; INFRARED DETECTORS; MOLECULAR BEAM EPITAXY (MBE);
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
T.J. Delyon et al., "MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE INFRARED FOCAL-PLANE ARRAYSON SILICON SUBSTRATES FOR MIDWAVE INFRARED APPLICATIONS", Journal of electronic materials, 27(6), 1998, pp. 550-555

Abstract

Molecular beam epitaxy has been employed to deposit HgCdTe infrared detector structures on Si(112) substrates with performance at 125K thatis equivalent to detectors grown on conventional CdZnTe substrates, The detector structures are grown on Si via CdTe(112)B buffer layers, whose structural properties include x-ray racking curve full width at half maximum of 63 are-sec and near-surface etch pit density of 3-5 x 10(5) cm(-2) for 9 mu m thick CdTe films. HgCdTe p(+)-on-n device structures were grown by molecular beam epitaxy (MBE) on both bulk CdZnTe and Si with 125K cutoff wavelengths ranging from 3.5 to 5 mu m. External quantum efficiencies of 70%, limited only by reflection loss at the uncoated Si-vacuum interface, were achieved for detectors on Si. The current-voltage (I-V) characteristics of MBE-grown detectors an CdZnTe and Si were found to be equivalent, with reverse breakdown voltages well in excess of 700 mV. The temperature dependences of the I-V characteristics of MBE-grown diodes on CdZnTe and Si were found to be essentially identical and in agreement with a diffusion-limited current modelfor temperatures down to 110K. The performance of MBE-grown diodes onSi is also equivalent to that of typical liquid phase epitaxy-grown devices on CdZnTe with R(0)A products in the 10(6)10(7) Ohm-cm(2) rangefor 3.6 mu m cutoff at 125K and R(0)A products in the 10(4)-10(5) Ohm-cm(2) range for 4.7 mu m cutoff at 125K.

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Documento generato il 15/07/20 alle ore 05:28:04