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Titolo:
OBSERVATION OF A SIMPLE-CUBIC PHASE OF GAAS WITH A 16-ATOM BASIS (SC16)
Autore:
MCMAHON MI; NELMES RJ; ALLAN DR; BELMONTE SA; BOVORNRATANARAKS T;
Indirizzi:
UNIV LIVERPOOL,DEPT PHYS LIVERPOOL L69 7ZE MERSEYSIDE ENGLAND UNIV EDINBURGH,DEPT PHYS & ASTRON EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Physical review letters
fascicolo: 25, volume: 80, anno: 1998,
pagine: 5564 - 5567
SICI:
0031-9007(1998)80:25<5564:OOASPO>2.0.ZU;2-#
Fonte:
ISI
Lingua:
ENG
Soggetto:
III-V SEMICONDUCTORS; TETRAHEDRAL STRUCTURES; ELECTRONIC-PROPERTIES; PRESSURE; SILICON; TRANSITIONS; STABILITY; DENSITY; DIFFRACTION; STATES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
25
Recensione:
Indirizzi per estratti:
Citazione:
M.I. Mcmahon et al., "OBSERVATION OF A SIMPLE-CUBIC PHASE OF GAAS WITH A 16-ATOM BASIS (SC16)", Physical review letters, 80(25), 1998, pp. 5564-5567

Abstract

An SC16 phase of GaAs has been observed at high pressure. The phase is obtained by heating the high-pressure Cmcm phase to above similar to400 K at similar to 14 GPa and is found to be stable on cooling back to room temperature. The detailed structure has been refined. On pressure decrease, the SC16 phase is found to be stable down to atmosphericpressure. From high-temperature studies, the equilibrium range for the SC16 structure is 13 to 14.5 GPa.

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Documento generato il 21/09/20 alle ore 06:39:43