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Titolo:
MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE MIDWAVE INFRARED MULTISPECTRAL DETECTORS
Autore:
DELYON TJ; VIGIL JA; JENSEN JE; WU OK; JOHNSON JL; PATTEN EA; KOSAI K; VENZOR G; LEE V; JOHNSON SM;
Indirizzi:
HUGHES RES LABS,3011 MALIBU CANYON RD MALIBU CA 90265 SANTA BARBARA RES CTR GOLETA CA 93117
Titolo Testata:
Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
fascicolo: 3, volume: 16, anno: 1998,
pagine: 1321 - 1325
SICI:
1071-1023(1998)16:3<1321:MEOHMI>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
T.J. Delyon et al., "MOLECULAR-BEAM EPITAXIAL-GROWTH OF HGCDTE MIDWAVE INFRARED MULTISPECTRAL DETECTORS", Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 16(3), 1998, pp. 1321-1325

Abstract

Molecular beam epitaxy (MBE) has beep utilized to fabricate high performance HgCdTe infrared detectors with sensitivity to midwave infraredradiation in adjacent spectral bands for two-color thermal imaging applications. Growth of a multilayer HgCdTe device structure by MBE enables the use of an n-p-n device architecture that facilitates pixel-level registration of images in two separate spectral bands. Device structures were grown on CdZnTe(211)(B) substrates using CdTe, Te, and Hg sources with in situ In and As doping. The composition of the HgCdTe alloy layers was adjusted to achieve detection of infrared radiation in adjacent spectral bands in the 3.5-4.5 mu m wavelength range. As-growndevice structures were characterized with x-ray diffraction, wet chemical defect etching, and secondary ion mass spectrometry. Mesa type devices were patterned using reactive ion etching and ohmic contacts were made to the two n-type layers for operation of the detectors in a sequential detection mode. The spectral response characteristics of the devices are highly uniform across a 64x64 element array, with standarddeviation in cutoff wavelength less than 0.01 mu m and external quantum efficiencies greater than 70% in both bands. Sharp detector cutoffsenable spectral crosstalk less than 1% to be obtained for spectral bands with as little as 0.6 mu m separation. Junction reverse-breakdown voltages in excess of 500 mV and 80 K dynamic resistance-area productsfor each component diode in excess of 1x10(6) Omega cm(2) at +/-100mVoperating bias have been demonstrated. (C) 1998 American Vacuum Society.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 12/07/20 alle ore 12:43:27