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Titolo:
OXIDATION BEHAVIOR OF CVD TIN-TI5SI3 COMPOSITE COATINGS
Autore:
LLAURO G; GOURBILLEAU F; SIBIEUDE F; HILLEL R;
Indirizzi:
UNIV PERPIGNAN,CNRS,IMP F-66860 PERPIGNAN FRANCE INST SCI MAT & RAYONNEMENT,LERMAT F-14050 CAEN FRANCE CNRS,IMP F-66120 FONT ROMEU FRANCE
Titolo Testata:
Thin solid films
fascicolo: 1-2, volume: 315, anno: 1998,
pagine: 336 - 344
SICI:
0040-6090(1998)315:1-2<336:OBOCTC>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Soggetto:
HIGH-TEMPERATURE OXIDATION; SI3N4-TIN COMPOSITE; FILMS; NITRIDE; KINETICS; SYSTEM;
Keywords:
OXIDATION; CHEMICAL VAPOR DEPOSITION; TIN-TI5SI3;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
G. Llauro et al., "OXIDATION BEHAVIOR OF CVD TIN-TI5SI3 COMPOSITE COATINGS", Thin solid films, 315(1-2), 1998, pp. 336-344

Abstract

Titanium silicide Ti5Si3 has been introduced in TiN coatings by in situ chemical vapor deposition (CVD) in order to improve their oxidationresistance. The behaviors of these TiNSi composites and of pure TiN in air have been compared in the range 800-1150 degrees C. Oxidation kinetics have been deduced from in situ thickness measurements of the oxidation layers as a function of time, by means of high-temperature X-ray diffractometry. Parabolic time dependence for the TiN oxidation with an activation energy of 187 kJ mol(-1) and a pre-exponential factor of 1.4 10(-3) cm(2) s(-1) has been found in agreement with results previously reported. Concerning the TiNSi, two regimes of oxidation have been evidenced. Above 950 degrees C, the oxidation layers grow parabolically with time according to a.diffusion-limited process. Below 950 degrees C, a fast oxidation occurs in a first stage. Then, the higher the temperature, the faster a threshold is reached corresponding to a complete passivation. Taking into account SIMS and XPS analyses in addition with TEM and EDS information, some assumptions have been proposedto explain the TiNSi oxidation mechanism, (C) 1998 Elsevier Science S. A.

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Documento generato il 02/07/20 alle ore 20:27:46