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Titolo:
APPLICATION OF THE REFLECTION INTENSITY OF THE BIJVOET PAIR TO THE DETERMINATION OF ANOMALOUS SCATTERING FACTORS FOR GA
Autore:
ZHAO ZY; HAN JH; FUKAMACHI T; YOSHIZAWA M; EHARA K; NAKAJIMA T; KAWAMURA T;
Indirizzi:
ANHUI UNIV,DEPT PHYS HEFEI 230039 PEOPLES R CHINA SAITAMA INST TECHNOL OKABE SAITAMA 36902 JAPAN YAMANASHI UNIV KOFU YAMANASHI 400 JAPAN NATL LAB HIGH ENERGY PHYS,PHOTON FACTORY TSUKUBA IBARAKI 305 JAPAN
Titolo Testata:
Journal of physics. Condensed matter
fascicolo: 9, volume: 6, anno: 1994,
pagine: 1619 - 1626
SICI:
0953-8984(1994)6:9<1619:AOTRIO>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
Z.Y. Zhao et al., "APPLICATION OF THE REFLECTION INTENSITY OF THE BIJVOET PAIR TO THE DETERMINATION OF ANOMALOUS SCATTERING FACTORS FOR GA", Journal of physics. Condensed matter, 6(9), 1994, pp. 1619-1626

Abstract

This paper discusses how to use the integrated reflection intensity of the Bijvoet pair for a polar crystal to determine the anomalous scattering factors f(Ga)' and f(Ga)'' for Ga near the Ga K absorption edgein GaAs. The values of f(Ga) and f(Ga)'' have been calculated from the integrated intensities of the +/-(333) and +/-(555) reflections bay using the methods of the present paper. The agreement between calculations and theoretical values is fairly good. Furthermore, the x-ray absorption near-edge structure on the high-energy side near the K absorption edge has been given in the calculated values. Such a structure cannot be predicted by Sasaki's results.

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Documento generato il 25/11/20 alle ore 10:00:45