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Titolo:
INVESTIGATION ON SURFACE OF BORON-DOPED CVD DIAMOND BY CATHODOLUMINESCENCE SPECTROSCOPY
Autore:
WANG CL; HATTA A; JIANG N; WON JH; ITO T; HIRAKI A; JIN ZS; ZOU GT;
Indirizzi:
OSAKA UNIV,DEPT ELECT ENGN SUITA OSAKA 565 JAPAN JILIN UNIV,NATL LAB SUPERHARD MAT CHANGCHUN 130023 PEOPLES R CHINA
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 6, volume: 7, anno: 1998,
pagine: 748 - 752
SICI:
0925-9635(1998)7:6<748:IOSOBC>2.0.ZU;2-B
Fonte:
ISI
Lingua:
ENG
Soggetto:
VAPOR-DEPOSITED DIAMOND; ELECTRICAL-PROPERTIES;
Keywords:
DIAMOND FILMS; CATHODOLUMINESCENCE; BORON DOPING; SURFACE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
C.L. Wang et al., "INVESTIGATION ON SURFACE OF BORON-DOPED CVD DIAMOND BY CATHODOLUMINESCENCE SPECTROSCOPY", DIAMOND AND RELATED MATERIALS, 7(6), 1998, pp. 748-752

Abstract

Boron-doped polycrystalline and homoepitaxial CVD diamond films were investigated by cathodoluminescence (CL) spectroscopy. By CL imaging and by variation in the electron penetration depth, segregation of the 535 mil luminescence center at the growth surface and the interface ofSi/diamond was confirmed. After etching by hydrogen plasma, or oxidization by annealing or plasma. the segregation of the 535 nm center still remained. Annealing in oxygen or oxidization by plasma induced the broad emission band at 500 nm enhanced in a near surface layer of electron penetration depth for 3-5 kV. The 500 nm band appeared remarkablyin thin B-doped films with a large quantity of grain boundaries. The bulging of the 500 nm band was not observed in either homoepitaxial films or undoped films. (C) 1998 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/04/20 alle ore 02:44:23