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Titolo:
ATOMIC-FORCE MICROSCOPY STUDIES OF ZNS FILMS GROWN ON (100)GAAS BY THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD
Autore:
VALKONEN MP; LINDROOS S; KANNIAINEN T; LESKELA M; RESCH R; FRIEDBACHER G; GRASSERBAUER M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND VIENNA UNIV TECHNOL,INST ANALYT CHEM A-1060 VIENNA AUSTRIA
Titolo Testata:
Journal of materials research
fascicolo: 6, volume: 13, anno: 1998,
pagine: 1688 - 1692
SICI:
0884-2914(1998)13:6<1688:AMSOZF>2.0.ZU;2-K
Fonte:
ISI
Lingua:
ENG
Soggetto:
SULFIDE THIN-FILMS; EPITAXY; DEPOSITION; CDS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
M.P. Valkonen et al., "ATOMIC-FORCE MICROSCOPY STUDIES OF ZNS FILMS GROWN ON (100)GAAS BY THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION METHOD", Journal of materials research, 13(6), 1998, pp. 1688-1692

Abstract

In this study zinc sulfide thin films were grown by the successive ionic layer adsorption anal reaction (SILAR) technique on (100) GaAs substrates from aqueous precursor solutions. The atomic force microscopy (AFM) method was used to study the growth of the films up to a thickness of 180 nm. The ZnS thin films on (100) GaAs were smooth with an rmsroughness of 0.2-1.9 nm depending on the film thickness. After the GaAs surface was covered with ZnS, the growth appeared to be nearly layerwise. In addition, in situ AFM studies were carried out to analyze the dissolution of (100) GaAs in water, which is a process competing with the thin film deposition by the SILAR.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 22/09/20 alle ore 20:07:22