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Titolo:
DEGREE OF DISSOCIATION MEASURED BY FTIR ABSORPTION-SPECTROSCOPY APPLIED TO VHF SILANE PLASMAS
Autore:
SANSONNENS L; HOWLING AA; HOLLENSTEIN C;
Indirizzi:
ECOLE POLYTECH FED LAUSANNE,CTR RECH PHYS PLASMAS,PPB ECUBLENS CH-1015 LAUSANNE SWITZERLAND
Titolo Testata:
Plasma sources science & technology
fascicolo: 2, volume: 7, anno: 1998,
pagine: 114 - 118
SICI:
0963-0252(1998)7:2<114:DODMBF>2.0.ZU;2-W
Fonte:
ISI
Lingua:
ENG
Soggetto:
GLOW-DISCHARGES; EXCITATION-FREQUENCY; AMORPHOUS-SILICON; 13.56 MHZ; DEPOSITION; FILM; GAS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
30
Recensione:
Indirizzi per estratti:
Citazione:
L. Sansonnens et al., "DEGREE OF DISSOCIATION MEASURED BY FTIR ABSORPTION-SPECTROSCOPY APPLIED TO VHF SILANE PLASMAS", Plasma sources science & technology, 7(2), 1998, pp. 114-118

Abstract

In situ Fourier transform infrared (FTIR) absorption spectroscopy hasbeen used to determine the fractional depletion of silane in a radio-frequency (ri) glow discharge. The technique used a simple single-passarrangement and was implemented in a large-area industrial reactor for deposition of amorphous silicon. Measurements were made on silane plasmas for a range of excitation frequencies. It was observed that, at constant plasma power, the fractional depletion increased from 35% at 13.56 MHz to 70% at 70 MHz. With a simple model based on the density continuity equations in the gas phase, it was shown that this increase is due to a higher dissociation rate and is largely responsible for the observed increase in the deposition rate with the frequency.

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Documento generato il 12/07/20 alle ore 12:17:41