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Titolo:
Metal node contact TFT SRAM cell for high-speed, low-voltage applications
Autore:
Son, KS; Kwon, SW; Lee, YJ; Kim, DH;
Indirizzi:
Hyundai Elect Ind Co Ltd, Memory Prod & Technol Dev Div, Kyungki Do 467701, Hyundai Elect Ind Co Ltd Kyungki Do South Korea 467701 yungki Do 467701, PohangKorea Sci & Technol, Dept Elect Engn, Pohang 790784, Kyungbuk, SouthPohang Univ Sci & Technol Pohang Kyungbuk South Korea 790784 ngbuk, South
Titolo Testata:
IEEE TRANSACTIONS ON ELECTRON DEVICES
fascicolo: 4, volume: 46, anno: 1999,
pagine: 805 - 806
SICI:
0018-9383(199904)46:4<805:MNCTSC>2.0.ZU;2-P
Fonte:
ISI
Lingua:
ENG
Soggetto:
LOAD CELL; PMOS;
Keywords:
SRAM; TFT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
4
Recensione:
Indirizzi per estratti:
Indirizzo: Son, KS Hyundai Elect Ind Co Ltd, Memory Prod & Technol Dev Div, Kyungki Do 467701, Hyundai Elect Ind Co Ltd Kyungki Do South Korea 467701 o 467701,
Citazione:
K.S. Son et al., "Metal node contact TFT SRAM cell for high-speed, low-voltage applications", IEEE DEVICE, 46(4), 1999, pp. 805-806

Abstract

The parasitic diode contact in the bottom gate thin-film transistor (TFT) static random access memory (SRAM) cell limits its high node charging current. The charging of 15 fF load capacitor to 0.1-0.2 V below V-cc takes about 0.65 ms. This adverse effect is circumvented in the metal contact TFT SRAM cell, whose charging to full V-cc is seven times faster.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/09/20 alle ore 10:54:26