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Titolo:
A new bottom-gated poly-Si thin-film transistor
Autore:
Choi, KY; Park, KC; Park, CM; Han, MK;
Indirizzi:
Samsung Elect Co, LCD R&D Grp, Kyungki Do 449900, South Korea Samsung Elect Co Kyungki Do South Korea 449900 ki Do 449900, South Korea Seoul Natl Univ, Sch Elect Engn, Seoul 151742, South Korea Seoul Natl Univ Seoul South Korea 151742 Engn, Seoul 151742, South Korea
Titolo Testata:
IEEE ELECTRON DEVICE LETTERS
fascicolo: 4, volume: 20, anno: 1999,
pagine: 170 - 172
SICI:
0741-3106(199904)20:4<170:ANBPTT>2.0.ZU;2-2
Fonte:
ISI
Lingua:
ENG
Soggetto:
TFTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Engineering, Computing & Technology
--discip_EC--
Citazioni:
7
Recensione:
Indirizzi per estratti:
Indirizzo: Choi, KY Samsung Elect Co, LCD R&D Grp, Kyungki Do 449900, South Korea Samsung Elect Co Kyungki Do South Korea 449900 900, South Korea
Citazione:
K.Y. Choi et al., "A new bottom-gated poly-Si thin-film transistor", IEEE ELEC D, 20(4), 1999, pp. 170-172

Abstract

We have proposed and fabricated the new bottom-gated poly-Si TFT with a partial amorphous-Si (a-Si) region by employing the selective laser annealing, The channel layer of the proposed TFT's is composed of poly-Si region in the center and a-Si region in the edge. The TEM image shows that the local a-Si region is successfully fabricated by the effective cut out of the incident laser light in the upper a-Si laver, Our experimental results show that the reverse leakage currents are decreased significantly in the new poly-Si TFT compared with conventional one. This reduction is due to the suppression of field emission currents by local a-Si region like that of a-Si TFT's while the ON currents are kept almost the same due to the considerable inducement of electron carriers in the short a-Si channel by the positive gate bias.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 10/07/20 alle ore 08:43:42