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Titolo:
INFLUENCE OF ION SPUTTERING ON THE SURFACE-TOPOGRAPHY OF GAAS
Autore:
ASOMOZA R; MERKULOVA O; MERKULOV A; VIDAL MA; SALAZAR B;
Indirizzi:
INST POLITECN NACL,DEPT INGN ELECT,CTR INVEST & ESTUDIOS AVANZADOS,APDO POSTAL 14-740 MEXICO CITY 07000 DF MEXICO INST POLITECN NACL,DEPT INGN ELECT,CTR INVEST & ESTUDIOS AVANZADOS MEXICO CITY 07000 DF MEXICO UASLP,INST INVEST COMUNICAC OPT SAN LUIS POTOSI 78000 MEXICO
Titolo Testata:
Applied surface science
fascicolo: 3-4, volume: 126, anno: 1998,
pagine: 205 - 212
SICI:
0169-4332(1998)126:3-4<205:IOISOT>2.0.ZU;2-D
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; RIPPLE TOPOGRAPHY; DEPTH-RESOLUTION; BOMBARDED INP; SEMICONDUCTORS; ENERGY; GROWTH;
Keywords:
ION BOMBARDMENT; SIMS; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS AND TOPOGRAPHY; GAAS; ATOMIC FORCE MICROSCOPY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
32
Recensione:
Indirizzi per estratti:
Citazione:
R. Asomoza et al., "INFLUENCE OF ION SPUTTERING ON THE SURFACE-TOPOGRAPHY OF GAAS", Applied surface science, 126(3-4), 1998, pp. 205-212

Abstract

In this work we report on studies of the modification of a surface ofgallium arsenide GaAs during irradiation by heavy cesium (Cs+) ions during secondary ion mass spectrometry (SIMS) measurements. The surfaceroughness was investigated by measuring the distribution of heights at the surface of the samples by atomic force microscopy (AFM), with their subsequent statistical processing. We observed both an increase, and a reduction of the integrated root-mean-square height (RMS) depending on the sample preparation. The analysis of the structural function has allowed us to estimate the characteristic lateral sizes of surfacestructures arising during ion sputtering. It was established, that ina lateral range of about 1-100 nm, the roughness of the surface of the gallium arsenide increases for all investigated samples. (C) 1998 Elsevier Science B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 03/12/20 alle ore 05:44:45