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Titolo:
IN-SITU MONITORING OF SILICON SURFACES DURING REACTIVE ION ETCHING
Autore:
SAKIKAWA N; SHISHIDA Y; MIYAZAKI S; HIROSE M;
Indirizzi:
HIROSHIMA UNIV,DEPT ELECT ENGN,1-4-1 KAGAMIYAMA HIGASHIHIROSHIMA 7398527 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
fascicolo: 4A, volume: 37, anno: 1998,
pagine: 409 - 412
SICI:
0021-4922(1998)37:4A<409:IMOSSD>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
MECHANISMS; PLASMAS; SIO2;
Keywords:
REACTIVE ION ETCHING; INFRARED ATTENUATED TOTAL REFLECTION SPECTROSCOPY; IN SITU MONITORING; FLUOROCARBON PLASMA; SURFACE REACTION LAYER;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
N. Sakikawa et al., "IN-SITU MONITORING OF SILICON SURFACES DURING REACTIVE ION ETCHING", JPN J A P 2, 37(4A), 1998, pp. 409-412

Abstract

Surface chemical reactions during reactive ion etching (RIE) of silicon in a CF4+O-2 plasma have been investigated by employing in situ Fourier-transform infrared attenuated total reflection (FT-IR ATR) spectroscopy. It is shown that a surface reaction layer with a thickness of 2-4 nm is composed of SiFX (X = 1, 2, 4 and presumably 3) and SiOY (Y < 2) bonds. The SiFX bond concentrations in the surface reaction layerare almost independent of O-2 gas concentration in the plasma becausethey are located mainly at the subsurface layer/Si interface. The etch rate is determined by the oxidized subsurface layer thickness and fluorine radical flux penetrating into the interface region, where the etch products SiFX are formed.

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Documento generato il 06/12/20 alle ore 00:02:42