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Titolo:
EFFECT OF COMPOSITION ON THE PROPERTIES OF AMORPHOUS-SILICON CARBIDE AT A CERTAIN OPTICAL GAP
Autore:
SHIMA M; TERAKAWA A; ISOMURA M; TSUDA S;
Indirizzi:
SANYO ELECT CO LTD,NEW MAT RES CTR,1-18-13 HASHIRIDANI HIRAKATA OSAKA573 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 4A, volume: 36, anno: 1997,
pagine: 2044 - 2048
SICI:
0021-4922(1997)36:4A<2044:EOCOTP>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
SOLAR-CELLS; PLASMA DECOMPOSITION; FILMS; METHANE; SILANE;
Keywords:
AMORPHOUS SILICON CARBIDE; SOLAR CELL; OPTICAL GAP; LIGHT-INDUCED DEGRADATION; HYDROGEN; BONDING CONFIGURATION; COMPOSITION; DEFECT DENSITY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
M. Shima et al., "EFFECT OF COMPOSITION ON THE PROPERTIES OF AMORPHOUS-SILICON CARBIDE AT A CERTAIN OPTICAL GAP", JPN J A P 1, 36(4A), 1997, pp. 2044-2048

Abstract

The relationship between composition and optoelectric properties was investigated for a-SiC:H alloys with a constant optical gap (E-opt) and different compositions. The compositions, hydrogen content (C-H) andcarbon content (C-C), and the optical gap of a-SiC:H were successfully controlled independently. E-opt of a-SiC:H can be expressed by a linear function of the compositions and a negative dependence of E-opt onC-C is observed for our samples. In the constant E-opt system, C-H increases with an increase in C-C in spite of a rise in the substrate temperature. In particular, the increase in the Si-H-2 density is much more significant than that in the C-H bond density. This result suggests that the incorporated carbon atoms affect the bonding configuration between silicon and hydrogen. The film properties, such as photoconductivity and defect density, and solar cell performance become inferior both before and after light-soaking with an increase in C-C, namely the Si-H-2 density. The Si-H-2 bond is an important factor to consider when determining the stability of a-SiC:H as well as a-Si:H and a-SiGe:H.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/12/20 alle ore 03:56:44