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Titolo:
LIQUID-PHASE EPITAXY GROWTH OF ALXGAYIN1-X-YPZAS1-ZGAAS WITH DIRECT-BAND-GAP UP TO 2.0 EV
Autore:
XU ZL; XU WJ; LI L; YANG CQ; LIU HD;
Indirizzi:
CHINESE ACAD SCI,INST MECH,NATL MICROGRAV LAB CHINA BEIJING 100080 PEOPLES R CHINA BEIJING UNIV,DEPT PHYS,NATL LAB MESOSCOP PHYS BEIJING 100871 PEOPLES R CHINA
Titolo Testata:
Applied physics A: Materials science & processing
fascicolo: 5, volume: 66, anno: 1998,
pagine: 565 - 567
SICI:
0947-8396(1998)66:5<565:LEGOAW>2.0.ZU;2-M
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
5
Recensione:
Indirizzi per estratti:
Citazione:
Z.L. Xu et al., "LIQUID-PHASE EPITAXY GROWTH OF ALXGAYIN1-X-YPZAS1-ZGAAS WITH DIRECT-BAND-GAP UP TO 2.0 EV", Applied physics A: Materials science & processing, 66(5), 1998, pp. 565-567

Abstract

III-V pentenary semiconductor AlGaInPAs with a direct band gap of up to 2.0 eV has been grown successfully on GaAs substrates by liquid phase epitaxy;(LPE). With the introduction of the energy bowing parameters of quaternaries, the theoretical calculations agree well with the measured PL peak energy data from pentenary samples.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 23:08:24