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Titolo:
SELF-ORGANIZED CDSE QUANTUM DOTS ON (100)ZNSE GAAS SURFACES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/
Autore:
ARITA M; AVRAMESCU A; UESUGI K; SUEMUNE I; NUMAI T; MACHIDA H; SHIMOYAMA N;
Indirizzi:
HOKKAIDO UNIV,RES INST ELECT SCI SAPPORO HOKKAIDO 060 JAPAN TRICHEM LAB INC YAMANASHI 40901 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 6B, volume: 36, anno: 1997,
pagine: 4097 - 4101
SICI:
0021-4922(1997)36:6B<4097:SCQDO(>2.0.ZU;2-H
Fonte:
ISI
Lingua:
ENG
Soggetto:
INAS ISLANDS; GAAS; SIZE; EXCITONS; LAYER; INP;
Keywords:
CDSE; II-VI QUANTUM DOT; ZNSE/GAAS HETEROEPITAXIAL GROWTH; ATOMICALLY FLAT GAAS SURFACE; TDMAAS; STRANSKI-KRASTANOV GROWTH MODE; MOMBE;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M. Arita et al., "SELF-ORGANIZED CDSE QUANTUM DOTS ON (100)ZNSE GAAS SURFACES GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY/", JPN J A P 1, 36(6B), 1997, pp. 4097-4101

Abstract

II-VI semiconductor low-dimensional structures, quantum dots, have been grown on GaAs substrates by metalorganic molecular beam epitaxy (MOMBE). Before the heteroepitaxial growth, atomically flat, As-stabilized GaAs surfaces were prepared by high-temperature As cleaning using tris-dimethylamino-arsenic (TDMAAs). CdSe thin films deposited on (100)ZnSe/GaAs surfaces have been investigated with atomic force microscopy (AFM) and were found to form three-dimensional islands with rather uniform size distribution. A large mismatch (similar to 7%) Oi lattice constants between CdSe and ZnSe pseudomorphically grown on GaAs possiblyresults in the Stranski-Krastanov growth mode. CdSe quantum dots witha diameter of 97 +/- 11 nm were successfully formed at 350 degrees C.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 28/09/20 alle ore 17:06:37