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Titolo:
DETERMINATION OF THE EFFECTIVE HALL FACTOR IN P-TYPE SEMICONDUCTORS
Autore:
WENZEL M; IRMER G; MONECKE J; SIEGEL W;
Indirizzi:
ROSSENDORF INC,RES CTR,INST NUCL & HADRON PHYS,POB 510119 D-01314 DRESDEN GERMANY FREIBERG UNIV MIN & TECHNOL,INST THEORET PHYS D-09596 FREIBERG GERMANY FREIBERG UNIV MIN & TECHNOL,INST PHYS EXPT D-09596 FREIBERG GERMANY
Titolo Testata:
Semiconductor science and technology
fascicolo: 5, volume: 13, anno: 1998,
pagine: 505 - 511
SICI:
0268-1242(1998)13:5<505:DOTEHF>2.0.ZU;2-6
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHONON-PLASMON MODES; RAMAN-SCATTERING; LATTICE MOBILITY; HOLE MOBILITY; III-V; GAAS; GAP; ALXGA1-XAS; SPECTRA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
35
Recensione:
Indirizzi per estratti:
Citazione:
M. Wenzel et al., "DETERMINATION OF THE EFFECTIVE HALL FACTOR IN P-TYPE SEMICONDUCTORS", Semiconductor science and technology, 13(5), 1998, pp. 505-511

Abstract

The comparison of free hole concentrations in p-type semiconductors obtained by Raman and by Hall measurements gives the possibility of determining an effective Hall factor depending on temperature and hole concentration. This will be shown for GaAs, GaP and InP in the temperature range from 77 K to 300 K. In the case of GaAs the experimentally obtained Hall factor is compared with a theoretical one, calculated fromdifferent scattering mechanisms within a two-band model. For the evaluation of Raman measurements a generalization of the Drude theory including interband transitions is used. Theoretical Hall factors and the comparison of calculated Hall mobilities with experimental ones are given. Possible sources of errors in the theory and in the evaluation ofthe experimental results are discussed.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 07:36:27