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Titolo:
CORRELATION BETWEEN LIGHT-INDUCED DEGRADATION AND STRUCTURAL INHOMOGENEITIES IN HYDROGENATED AMORPHOUS-SILICON PREPARED UNDER HIGH-RATE DEPOSITION CONDITIONS
Autore:
SAKIKAWA N; TAMAO M; MIYAZAKI S; HIROSE M;
Indirizzi:
HIROSHIMA UNIV,DEPT ELECT ENGN,1-4-1 KAGAMIYAMA HIGASHIHIROSHIMA 739 JAPAN HIROSHIMA UNIV,DEPT ELECT ENGN HIGASHIHIROSHIMA 739 JAPAN
Titolo Testata:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
fascicolo: 2, volume: 37, anno: 1998,
pagine: 432 - 434
SICI:
0021-4922(1998)37:2<432:CBLDAS>2.0.ZU;2-Y
Fonte:
ISI
Lingua:
ENG
Soggetto:
ANGLE X-RAY; A-SI-H; DANGLING BONDS; SCATTERING; GROWTH;
Keywords:
HYDROGENATED AMORPHOUS SILICON; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; STRUCTURAL INHOMOGENEITY; STRUCTURAL FLUCTUATION; SMALL-ANGLE X-RAY SCATTERING; LIGHT INDUCED DEGRADATION;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
24
Recensione:
Indirizzi per estratti:
Citazione:
N. Sakikawa et al., "CORRELATION BETWEEN LIGHT-INDUCED DEGRADATION AND STRUCTURAL INHOMOGENEITIES IN HYDROGENATED AMORPHOUS-SILICON PREPARED UNDER HIGH-RATE DEPOSITION CONDITIONS", JPN J A P 1, 37(2), 1998, pp. 432-434

Abstract

The structural inhomogeneities of hydrogenated amorphous silicon (a-Si:H) prepared at high-deposition rates (20-27 Angstrom/s) have been studied by the small angle X-ray scattering (SAXS) technique by changingthe rf-electrode (cathode) bias voltages for controlling the ion fur impinging on the growing film surface. The total bonded hydrogen contents of the deposited films are independent of de-bias, while light-induced degradation is significantly suppressed at the cathode bias V-c =+25 V. It is found that structural fluctuation in the range of 10-400Angstrom as evaluated by SAXS is reduced to about one half at V-c = +25 V in comparison with that of conventional deposition conditions atarate of similar to 1 Angstrom/s.

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Documento generato il 05/12/20 alle ore 16:46:57