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Titolo:
OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF SNO2 THIN-FILMS BY REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY
Autore:
YUBERO F; JIMENEZ VM; GONZALEZELIPE AR;
Indirizzi:
UNIV SEVILLA,CSIC,INST CIENCIA MAT SEVILLA,AVDA AMER VESPUCIO S-N,ISLA CARTUJA SEVILLE 41092 SPAIN DEPT QUIM INORGAN SEVILLE 41092 SPAIN
Titolo Testata:
Surface science
fascicolo: 1-3, volume: 400, anno: 1998,
pagine: 116 - 126
SICI:
0039-6028(1998)400:1-3<116:OAEOST>2.0.ZU;2-X
Fonte:
ISI
Lingua:
ENG
Soggetto:
SCATTERING CROSS-SECTIONS; DIELECTRIC LOSS FUNCTION; MEAN FREE PATHS; QUANTITATIVE-ANALYSIS; LOSS SPECTRA; METAL-OXIDE; POLYCRYSTALLINE TIN; REELS SPECTRA; PHOTOEMISSION; OXIDATION;
Keywords:
CHEMICAL VAPOR DEPOSITION; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRON-SOLID INTERACTION; POLYCRYSTALLINE THIN FILMS; TIN OXIDES;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
43
Recensione:
Indirizzi per estratti:
Citazione:
F. Yubero et al., "OPTICAL-PROPERTIES AND ELECTRONIC-TRANSITIONS OF SNO2 THIN-FILMS BY REFLECTION ELECTRON-ENERGY-LOSS SPECTROSCOPY", Surface science, 400(1-3), 1998, pp. 116-126

Abstract

Optical properties of SnO2 thin films in the 4-60 eV energy range aredetermined by reflection electron energy loss spectroscopy. Bulk and surface electron loss functions, real and imaginary parts of the dielectric Function. refraction index, extinction and absorption coefficients are obtained from the analysis of the electron energy loss spectra. Electronic transitions are identified through the interpretation of the optical data. The samples (similar to 250-500 nm thick) were produced by ion beam-induced chemical vapor deposition. It is found that thecompacity of the SnO2 thin films affects their optical properties andtherefore the relative intensity of the observed electronic transitions. The advantages of this method to determine optical properties of thin films are discussed. Inelastic mean free paths (6.7, 17 and 41 Angstrom for electrons traveling in SnO2 with kinetic energies of 300, 800 and 2000 eV, respectively) are obtained from the corresponding inelastic electron scattering cross-sections. (C) 1998 Elsevier Science B.V.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 22:13:10