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Titolo:
SECONDARY-ION YIELD CHANGES ON RIPPLED INTERFACES
Autore:
MAKEEV MA; BARABASI AL;
Indirizzi:
UNIV NOTRE DAME,DEPT PHYS NOTRE DAME IN 46556
Titolo Testata:
Applied physics letters
fascicolo: 8, volume: 72, anno: 1998,
pagine: 906 - 908
SICI:
0003-6951(1998)72:8<906:SYCORI>2.0.ZU;2-I
Fonte:
ISI
Lingua:
ENG
Soggetto:
ROUGHENING INSTABILITY; TOPOGRAPHY CHANGES; SURFACE; BOMBARDMENT; EVOLUTION; EROSION; SILICON; GAAS; SI;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
23
Recensione:
Indirizzi per estratti:
Citazione:
M.A. Makeev e A.L. Barabasi, "SECONDARY-ION YIELD CHANGES ON RIPPLED INTERFACES", Applied physics letters, 72(8), 1998, pp. 906-908

Abstract

Sputter erosion often leads to the development of surface ripples. Here we investigate the effect of the ripples on the secondary ion yield, by calculating the yield as a function of the microscopic parameterscharacterizing the ion cascade (such as penetration depth, widths of the deposited energy distribution) and the ripples (ripple amplitude, wavelength), We find that ripples can strongly enhance the yield, withthe magnitude of the effect depending on the interplay between the ion and ripple characteristics. Furthermore, pre compare our predictionswith existing experimental results. (C) 1998 American Institute of Physics.

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Documento generato il 27/11/20 alle ore 01:09:09