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Titolo:
SURFACE HYDROGEN AND GROWTH MECHANISMS OF SYNCHROTRON RADIATION-ASSISTED SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DISILANE
Autore:
YOSHIGOE A; HIRANO S; URISU T;
Indirizzi:
INST MOL SCI,DEPT VACUUM UV PHOTOSCI OKAZAKI AICHI 444 JAPAN INST MOL SCI,DEPT VACUUM UV PHOTOSCI OKAZAKI AICHI 444 JAPAN GRAD UNIV ADV STUDIES,INST MOL SCI OKAZAKI AICHI 444 JAPAN TOYOHASHI UNIV TECHNOL,DEPT ELECT & ELECT ENGN TOYOHASHI AICHI 441 JAPAN
Titolo Testata:
Applied organometallic chemistry
fascicolo: 4, volume: 12, anno: 1998,
pagine: 253 - 256
SICI:
0268-2605(1998)12:4<253:SHAGMO>2.0.ZU;2-O
Fonte:
ISI
Lingua:
ENG
Soggetto:
SI(100); IRRADIATION; DESORPTION; HYDRIDES;
Keywords:
DISILANE; GAS SOURCE MBE; SYNCHROTRON RADIATION; SILICON HYDRIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
A. Yoshigoe et al., "SURFACE HYDROGEN AND GROWTH MECHANISMS OF SYNCHROTRON RADIATION-ASSISTED SILICON GAS-SOURCE MOLECULAR-BEAM EPITAXY USING DISILANE", Applied organometallic chemistry, 12(4), 1998, pp. 253-256

Abstract

Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)-assisted gas source molecular beam epitaxy (SR-GSMBE) using Si2H6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth by means of infrared reflection absorption spectroscopy with a Si(100) substrate and a CoSi2 buried metal layer. It is concluded that the chemisorption of gas-phase reactive species such as SiHn and H generated by SR irradiation and the subsequent hydrogen desorption are the key mechanisms of SR-GSMBE at low substrate temperatures. (C) 1998 John Wiley & Sons, Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 18/09/20 alle ore 11:13:19