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Titolo:
LASER ANNEALING OF ZINC-OXIDE THIN-FILM DEPOSITED BY SPRAY-CVD
Autore:
BHAUMIK GK; NATH AK; BASU S;
Indirizzi:
INDIAN INST TECHNOL,CTR MAT SCI KHARAGPUR 721302 W BENGAL INDIA INDIAN INST TECHNOL,CTR MAT SCI KHARAGPUR 721302 W BENGAL INDIA SEMICOND COMPLEX PUNJAB INDIA CTR ADV TECHNOL INDORE INDIA
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1, volume: 52, anno: 1998,
pagine: 25 - 31
SICI:
0921-5107(1998)52:1<25:LAOZTD>2.0.ZU;2-V
Fonte:
ISI
Lingua:
ENG
Soggetto:
SILICON;
Keywords:
LASER ANNEALLING; ZNO THIN FILM; SPRAY-CVD;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
10
Recensione:
Indirizzi per estratti:
Citazione:
G.K. Bhaumik et al., "LASER ANNEALING OF ZINC-OXIDE THIN-FILM DEPOSITED BY SPRAY-CVD", Materials science & engineering. B, Solid-state materials for advanced technology, 52(1), 1998, pp. 25-31

Abstract

A polycrystalline ZnO film was deposited on quartz and silicon substrates by a spray-CVD method. The deposited film was annealed by thermaland by laser heating. Both CW CO2 laser and pulsed excimer (XeCl) lasers were used for the purpose. The as-grown film and the annealed filmwere analysed for crystallinity and compositions by XRD, for surface morphology by SEM, for band gap by optical absorption and for electrical parameters by Van der Pauw and Wall effect measurements. While the excimer laser annealing improved the crystallinity with higher laser power density, CW CO2 laser incorporated the crystallinity only at low power. High power CO2 laser annealing damaged the ZnO surface with thecreation of more defects. This was verified by SEM morphology studies. There was no change in band gap which ensures no formation of any other phase in ZnO due to annealing effects. The increase in resistivityboth by thermal and pulsed laser annealing was confirmed by Van der Panw resistivity measurements. The majority carrier concentration and mobility were determined by Hall effect measurements. (C) 1998 ElsevierScience S.A. All rights reserved.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 01/12/20 alle ore 13:36:43