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Titolo:
ORDERING EFFECT ON BAND-GAP LOWERING IN LATTICE-MATCHED INALAS EPILAYERS GROWN ON INP BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
Autore:
HAN WS; LEE B; BAEK JH; LEE JH; JUNG BS; LEE EH; O B;
Indirizzi:
ELECT & TELECOMMUN RES INST,POB 106 TAEJON 305600 SOUTH KOREA CHUNGNAM NATL UNIV,DEPT PHYS TAEJON 305764 SOUTH KOREA
Titolo Testata:
Applied physics letters
fascicolo: 15, volume: 72, anno: 1998,
pagine: 1905 - 1907
SICI:
0003-6951(1998)72:15<1905:OEOBLI>2.0.ZU;2-T
Fonte:
ISI
Lingua:
ENG
Soggetto:
PHOTOLUMINESCENCE; AL0.48IN0.52AS; EPITAXY;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
17
Recensione:
Indirizzi per estratti:
Citazione:
W.S. Han et al., "ORDERING EFFECT ON BAND-GAP LOWERING IN LATTICE-MATCHED INALAS EPILAYERS GROWN ON INP BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION", Applied physics letters, 72(15), 1998, pp. 1905-1907

Abstract

Band-gap lowering due only to the cation ordering effect is investigated in InAlAs layers grown on InP by using photoluminescence measurement. Double-crystal x-ray diffraction and Rutherford backscattering measurements confirm that both of the InAlAs epilayers studied, grown at 700 and 750 degrees C, are lattice matched with InP substrates. Through transmission electron diffraction measurements, it is observed that a CuPt-type ordering structure is formed in the InAlAs layers grown at700 degrees C but not in the layers at 750 degrees C. Photoluminescence measurements at 1.7 K reveal that the band-gap energy of the ordered InAlAs is smaller by 60 meV than that of the unordered InAlAs. (C) 1998 American Institute of Physics.

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Documento generato il 26/11/20 alle ore 08:05:38