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Titolo:
OBSERVATION OF A CINNABAR PHASE IN GAAS AT HIGH-PRESSURE
Autore:
MCMAHON MI; NELMES RJ;
Indirizzi:
UNIV LIVERPOOL,DEPT PHYS LIVERPOOL L69 3BX MERSEYSIDE ENGLAND UNIV EDINBURGH,DEPT PHYS & ASTRON EDINBURGH EH9 3JZ MIDLOTHIAN SCOTLAND
Titolo Testata:
Physical review letters
fascicolo: 19, volume: 78, anno: 1997,
pagine: 3697 - 3700
SICI:
0031-9007(1997)78:19<3697:OOACPI>2.0.ZU;2-8
Fonte:
ISI
Lingua:
ENG
Soggetto:
CRYSTAL-STRUCTURE; III-V; SEMICONDUCTORS; TRANSITIONS; ALAS; ZNTE; GPA;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
19
Recensione:
Indirizzi per estratti:
Citazione:
M.I. Mcmahon e R.J. Nelmes, "OBSERVATION OF A CINNABAR PHASE IN GAAS AT HIGH-PRESSURE", Physical review letters, 78(19), 1997, pp. 3697-3700

Abstract

A previously unidentified high-pressure phase of GaAs has been found on pressure decrease from GaAs-II. The new phase is hexagonal, with a fourfold coordinated cinnabar structure very similar to that of ZnTe-II. The phase first appears on download from GaAs-II at 11.9(1) GPa, coexists with GaAs-I below 11.2(3) GPa, and starts to transform to GaAs-I at 8.1(2) GPa. Although no evidence of the phase is seen on pressureincrease, detailed comparisons with ZnTe suggest cinnabar GaAs is an equilibrium phase.

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Documento generato il 21/09/20 alle ore 05:02:27