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Titolo:
DIFFUSION THERMOPOWER OF A SILICON INVERSION LAYER AT LOW MAGNETIC-FIELDS
Autore:
FLETCHER R; PUDALOV VM; CAO S;
Indirizzi:
QUEENS UNIV,DEPT PHYS KINGSTON ON K7L 3N6 CANADA RUSSIAN ACAD SCI,INST HIGH PRESSURE PHYS TROITSK 142092 MOSCOW DISTRICT RUSSIA
Titolo Testata:
Physical review. B, Condensed matter
fascicolo: 12, volume: 57, anno: 1998,
pagine: 7174 - 7181
SICI:
0163-1829(1998)57:12<7174:DTOASI>2.0.ZU;2-G
Fonte:
ISI
Lingua:
ENG
Soggetto:
2-DIMENSIONAL ELECTRON-GAS; THERMOELECTRIC-POWER; MAGNETOTHERMOPOWER; COEFFICIENTS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
26
Recensione:
Indirizzi per estratti:
Citazione:
R. Fletcher et al., "DIFFUSION THERMOPOWER OF A SILICON INVERSION LAYER AT LOW MAGNETIC-FIELDS", Physical review. B, Condensed matter, 57(12), 1998, pp. 7174-7181

Abstract

We have investigated the longitudinal and transverse thermopowers, S-xx and S-yx, of an electron inversion layer in a Si-metal-oxide-semiconductor field-effect transistor at low magnetic fields in the temperature range similar to 0.5-4 K. We show that a single theoretical model,based on the Mott relation for diffusion, gives a good account of both the quantum oscillations and the smooth background at low temperatures where phonon drag can be ignored. An anomalous nonoscillatory component, possibly due to phonon drag, is found in S-yx at higher temperatures.

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Documento generato il 07/07/20 alle ore 22:19:21