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Titolo:
OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC
Autore:
DOYLE JP; SCHONER A; NORDELL N; GALECKAS A; BLEICHNER H; LINNARSSON MK; LINNROS J; SVENSSON BG;
Indirizzi:
IBM CORP,THOMAS J WATSON RES CTR,DIV RES,POB 218 YORKTOWN HTS NY 10598 ROYAL INST TECHNOL S-16440 KISTA SWEDEN
Titolo Testata:
Journal of applied physics
fascicolo: 7, volume: 83, anno: 1998,
pagine: 3649 - 3651
SICI:
0021-8979(1998)83:7<3649:OONEAD>2.0.ZU;2-Q
Fonte:
ISI
Lingua:
ENG
Soggetto:
6H;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
J.P. Doyle et al., "OBSERVATION OF NEAR-SURFACE ELECTRICALLY ACTIVE DEFECTS IN N-TYPE 6H-SIC", Journal of applied physics, 83(7), 1998, pp. 3649-3651

Abstract

In n-type 6H-SiC epitaxial layers grown by vapor phase epitaxy, we find that in contrast to the majority of the epitaxial layer, where electrically active defects are observed with a concentration less than 1 X 10(-13) cm(-3), a region near the front surface contains defects with concentrations approaching 10(14) cm(-3). A relationship between thenear-surface defects and metallic impurities is suggested by a Ti concentration of 1 X 10(16) cm(-3) in this region. The high concentrationof near surface defects is found to significantly reduce the carrier lifetime. (C) 1998 American Institute of Physics. [S0021-8979(98)03007-2].

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Documento generato il 23/09/20 alle ore 21:50:59