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Titolo:
ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MICROMECHANICAL APPLICATIONS
Autore:
LECLERC S; LECOURS A; CARON M; RICHARD E; TURCOTTE G; CURRIE JF;
Indirizzi:
GOAL ELECT MONTREAL PQ H2X 2A3 CANADA ECOLE POLYTECH,DEPT GENIE PHYS,LAB INTEGRAT SENSORS & ACTUATORS MONTREAL PQ H3C 3A7 CANADA
Titolo Testata:
Journal of vacuum science & technology. A. Vacuum, surfaces, and films
fascicolo: 2, volume: 16, anno: 1998,
pagine: 881 - 884
SICI:
0734-2101(1998)16:2<881:EPCS>2.0.ZU;2-R
Fonte:
ISI
Lingua:
ENG
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
11
Recensione:
Indirizzi per estratti:
Citazione:
S. Leclerc et al., "ELECTRON-CYCLOTRON-RESONANCE PLASMA CHEMICAL-VAPOR-DEPOSITED SILICON-NITRIDE FOR MICROMECHANICAL APPLICATIONS", Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 16(2), 1998, pp. 881-884

Abstract

We have studied the electron cyclotron resonance plasma chemical vapor deposition (ECR PCVD) of silicon nitride films onto unheated substrates to evaluate their potential for use in micromechanical devices. Wedemonstrate that this low temperature process (<120 degrees C) is compatible with lift-off patterning of both thin and thick films. We measured the deposition rate, stress and buffered HF (BHF) etch rate for different gas flows of silane, nitrogen and argon. The deposition rate is rate controlled by the silane flow and we obtained rates sufficiently high (0.7-1.4 mu m/h) to obtain films for practical use in micromechanics (0.5-2 mu m) in about 1 h. We measured stresses ranging from 1000 MPa compressive to 60 MPa tensile, and we can repeatedly obtain films with stress of less than 10 MPa. These films are ideal for both low-stress and stress-compensated device designs. We observed BHF (NH4F:HF 6:1 at 20 degrees C) etch rates from 5 nm/min to 150 nm/min, which are five times faster than those for films deposited by CVD. ECR films are ideal for fast etched sacrificial layers at 150 nm/min or as slowly etched masking layers at 5 nm/min. We found that stress and the BHF etch rate were strongly correlated: low etch rates are observed for highly compressively stressed films and high etch rates for lower stress. This correlation has a major impact on the design of micromechanicaldevices and on their fabrication processes using ECR PCVD. (C) 1998 American Vacuum Society. [S0734-2101(98)08502-9].

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/04/20 alle ore 04:00:29