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Titolo:
GROWTH AND CHARACTERIZATION OF ZINC-SULFIDE THIN-FILMS DEPOSITED BY THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION (SILAR) METHOD USINGCOMPLEXED ZINC IONS AS THE CATION PRECURSOR
Autore:
LINDROOS S; CHARREIRE Y; BONNIN D; LESKELA M;
Indirizzi:
UNIV HELSINKI,DEPT CHEM,POB 55 FIN-00014 HELSINKI FINLAND UNIV VERSAILLES ST QUENTIN F-78035 VERSAILLES FRANCE ESPCI,PHYS QUANT LAB F-75005 PARIS FRANCE
Titolo Testata:
Materials research bulletin
fascicolo: 3, volume: 33, anno: 1998,
pagine: 453 - 459
SICI:
0025-5408(1998)33:3<453:GACOZT>2.0.ZU;2-4
Fonte:
ISI
Lingua:
ENG
Keywords:
CHALCOGENIDES; SEMICONDUCTORS; THIN FILMS;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
18
Recensione:
Indirizzi per estratti:
Citazione:
S. Lindroos et al., "GROWTH AND CHARACTERIZATION OF ZINC-SULFIDE THIN-FILMS DEPOSITED BY THE SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION (SILAR) METHOD USINGCOMPLEXED ZINC IONS AS THE CATION PRECURSOR", Materials research bulletin, 33(3), 1998, pp. 453-459

Abstract

Zinc sulfide thin films were grown by the successive ionic layer adsorption and reaction method on soda lime glass and on indium tin oxide covered glass, using diluted solutions of ZnCl2 complexed with triethanolamine (TEA) or ethylenediamine as the cation precursor and a diluted solution of Na2S as the anion precursor. The growth rate of the ZnS film varied between 0.13 and 0.27 nm/cycle. The refractive indices were from 1.95 to 2.23, and the packing densities were from 72 to 90%. The highest refractive indices and packing densities were found in filmsgrown on indium tin oxide with TEA-complexed zinc chloride as the cation precursor. The Zn:S ratio in the films was from 0.89 to 1.08. According to the X-ray diffraction study, the films were polycrystalline and presumably cubic. The EXAFS studies revealed that the crystallinityof the thin film deposited with TEA-complexed ZnCl2 was similar to that of the films deposited with ZnCl2 as the precursor. Annealing slightly improved the quality of the successive ionic layer adsorption and reaction grown ZnS films. (C) 1998 Elsevier Science Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 24/09/20 alle ore 02:12:05