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Titolo:
EFFECTS OF IMPURITIES ON THE PROPERTIES OF AMORPHOUS-SILICON
Autore:
ISOMURA M; KINOSHITA T; TANAKA M; TSUDA S;
Indirizzi:
SANYO ELECT CO LTD,NEW MAT RES CTR,1-18-13 HASHIRIDANI HIRAKATA OSAKA573 JAPAN
Titolo Testata:
Applied surface science
, volume: 114, anno: 1997,
pagine: 754 - 758
SICI:
0169-4332(1997)114:<754:EOIOTP>2.0.ZU;2-S
Fonte:
ISI
Lingua:
ENG
Soggetto:
A-SI-H; SOLAR-CELLS; LAYER;
Keywords:
AMORPHOUS SILICON; OXYGEN; NITROGEN; BORON; LIGHT-INDUCED EFFECT;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Science Citation Index Expanded
Science Citation Index Expanded
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
M. Isomura et al., "EFFECTS OF IMPURITIES ON THE PROPERTIES OF AMORPHOUS-SILICON", Applied surface science, 114, 1997, pp. 754-758

Abstract

Oxygen and nitrogen impurities increase the electrical conductivity of hydrogenated amorphous silicon (a-Si:H) films due to their donor-like behavior, An appropriate amount of boron doping compensates those donors so that the conductivity is restored to the original value unlessalloying effects appear such as band gap widening, The creation of light-induced defects does not seem to be affected by the impurities, because the effects of the impurities are not obvious after light-soaking. The results indicate that the major effect of the oxygen and nitrogen is the creation of donors doe to their small fraction and that a large amount of the rest impurities with inactive configurations show noother significant effect until alloying effects appear.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/11/20 alle ore 05:58:29