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Titolo:
EXAFS STUDIES OF PLASMA-ENHANCED MBE GROWN GROUP III-NITRIDES
Autore:
BLANT AV; CHENG TS; JEFFS NJ; FOXON CT; BAILEY C; HARRISON PG; DENT AJ; MOSSELMANS JFW;
Indirizzi:
UNIV NOTTINGHAM,DEPT PHYS,UNIV PK NOTTINGHAM NG7 2RD ENGLAND UNIV NOTTINGHAM,DEPT CHEM NOTTINGHAM NG7 2RD ENGLAND CLCR,DARESBURY LABS WARRINGTON WA4 4AD CHESHIRE ENGLAND
Titolo Testata:
Materials science & engineering. B, Solid-state materials for advanced technology
fascicolo: 1-3, volume: 50, anno: 1997,
pagine: 38 - 41
SICI:
0921-5107(1997)50:1-3<38:ESOPMG>2.0.ZU;2-5
Fonte:
ISI
Lingua:
ENG
Keywords:
EXAFS STUDIES; GROUP III-NITRIDES; MOLECULAR BEAM EPITAXY;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
8
Recensione:
Indirizzi per estratti:
Citazione:
A.V. Blant et al., "EXAFS STUDIES OF PLASMA-ENHANCED MBE GROWN GROUP III-NITRIDES", Materials science & engineering. B, Solid-state materials for advanced technology, 50(1-3), 1997, pp. 38-41

Abstract

We have been studying the structural properties of Group III-Nitrideson Si substrates. We have shown from X-ray data that alloys of (AlGa)N and (InGa)N can be grown by plasma enhanced molecular beam epitaxy on oxidised (100) Si substrates with good control of the composition, over the entire range from InN to AlN. The composition of the alloys deduced from electron probe microanalysis data agree well with those from X-ray measurements assuming Vegard's law is valid ibr both alloy systems. SIMS studies show that the film composition is uniform in depth. EXAFS studies show no evidence for spinodal decomposition over the entire composition range for the (InGa)N alloys and indicate a monotonicvariation in lattice parameter with increasing In mole fraction. (C) 1997 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 29/09/20 alle ore 00:43:04