Catalogo Articoli (Spogli Riviste)

OPAC HELP

Titolo:
DETERMINATION OF OHMIC CONTACTS TO N-TYPE 6H-SIC AND POLYCRYSTALLINE 3C-SIC USING CIRCULAR TRANSMISSION-LINE STRUCTURES
Autore:
KRIZ J; GOTTFRIED K; KAUFMANN C; GESSNER T;
Indirizzi:
CHEMNITZ UNIV TECHNOL,CTR MICROTECHNOL D-09107 CHEMNITZ GERMANY
Titolo Testata:
DIAMOND AND RELATED MATERIALS
fascicolo: 1, volume: 7, anno: 1998,
pagine: 77 - 80
SICI:
0925-9635(1998)7:1<77:DOOCTN>2.0.ZU;2-L
Fonte:
ISI
Lingua:
ENG
Soggetto:
RESISTANCE; FILMS;
Keywords:
OHMIC CONTACTS; CIRCULAR TRANSMISSION LINE METHOD; W; TIW; WSI2;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
12
Recensione:
Indirizzi per estratti:
Citazione:
J. Kriz et al., "DETERMINATION OF OHMIC CONTACTS TO N-TYPE 6H-SIC AND POLYCRYSTALLINE 3C-SIC USING CIRCULAR TRANSMISSION-LINE STRUCTURES", DIAMOND AND RELATED MATERIALS, 7(1), 1998, pp. 77-80

Abstract

Ohmic contacts to n-type 3C- and 6H-SiC were investigated using the circular transmission line method (CTLM). For the contact metallizationtitanium-tungsten, tungsten and tungsten disilicide were used. The determination of the specific contact resistance using two different test structures of CTLMs was tried, but it was shown that the end contactmeasurements as they were proposed in the more sophisticated model byReeves were too high and the equations were not solvable within the conditions of the present study. The specific contact resistance was calculated by the method of Marlow and Das. Annealing the contacts resulted for TIW contacts in a rho(C) = 3.7 x 10(-4) Omega cm(-2) to 6H-SiC(7.1 x 10(-5) Omega cm(-2) to 3C-SiC) and for WSi2 contacts in a rho(C) = 2.1 x 10(-5) Omega cm(-2) to 6H-SiC (2..20 x 10(-5) Omega cm(-2) to 3C-SiC). (C) 1998 Elsevier Science S.A.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 05/07/20 alle ore 10:22:46