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Titolo:
CONTROL OF THE STOICHIOMETRY IN THE DEPOSITION OF COBALT OXIDES ON SIO2
Autore:
JIMENEZ VM; ESPINOS JP; GONZALEZELIPE AR;
Indirizzi:
UNIV SEVILLA,CSIC,INST CIENCIAS MAT SEVILLA,AVDA AMER VESPUCIO,S-N SEVILLE 41092 SPAIN UNIV SEVILLA,CSIC,INST CIENCIAS MAT SEVILLA SEVILLE 41092 SPAIN CTR INVEST CIENT ISLA DE LA CARTUJA,DEPT QUIM INORGAN SEVILLE 41092 SPAIN
Titolo Testata:
Surface and interface analysis
fascicolo: 1, volume: 26, anno: 1998,
pagine: 62 - 71
SICI:
0142-2421(1998)26:1<62:COTSIT>2.0.ZU;2-7
Fonte:
ISI
Lingua:
ENG
Soggetto:
ELECTRONIC-STRUCTURE; METAL-OXIDE; AUGER PARAMETER; OXYGEN; SURFACES; FILMS; XPS; OXIDATION; TEMPERATURE; CATALYSTS;
Keywords:
XPS; ISS; COO; CE3O4; INTERFACE EFFECTS; COBALT OXIDE;
Tipo documento:
Article
Natura:
Periodico
Settore Disciplinare:
Science Citation Index Expanded
Citazioni:
33
Recensione:
Indirizzi per estratti:
Citazione:
V.M. Jimenez et al., "CONTROL OF THE STOICHIOMETRY IN THE DEPOSITION OF COBALT OXIDES ON SIO2", Surface and interface analysis, 26(1), 1998, pp. 62-71

Abstract

Both CoO and Co3O4 overlayers have been deposited on SiO2 by evaporation from metallic Co and subsequent oxidation with oxygen and a plasmaof oxygen. The combined use of ion scattering spectroscopy and XPS shows that both oxides grow in the form of small particles on the surface of SiO2. Ion scattering spectroscopy also shows that the surface of cobalt oxide exposed to a plasma of oxygen is enriched in oxygen ions with respect to the surface of the cobalt oxide formed by exposure to oxygen. The Co 2p spectra corresponding to the deposits obtained by oxidation with O-2 are characteristic of CoO, while those corresponding to the deposits obtained after oxidation with a plasma are typical of Co3O4. Moreover, the O-Co/Co ratios determined by XPS and factor analysis indicate the formation of CoO stoichiometry in the former case andCo3O4 stoichiometry in the latter. It has also been observed that no shift in either binding energy or modified Anger parameter alpha' appears as a function of coverage. This absence of shifts is interpreted as a consequence of the type of screening mechanism that dominates the relaxation of the photoholes in these oxides. (C) 1998 John Wiley & Sons, Ltd.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 27/11/20 alle ore 22:07:08