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Titolo:
UP-CONVERSION LUMINESCENCE VIA A BELOW-GAP STATE IN GAAS ALGAAS QUANTUM-WELLS/
Autore:
KAMATA N; HOSHINO K; UCHIDA T; YAMADA K; NISHIOKA M; ARAKAWA Y;
Indirizzi:
SAITAMA UNIV,DEPT FUNCT MAT SCI,255 SHIMO OHKUBO URAWA SAITAMA 338 JAPAN UNIV TOKYO,INST IND SCI,MINATO KU TOKYO 106 JAPAN
Titolo Testata:
Superlattices and microstructures
fascicolo: 4, volume: 22, anno: 1997,
pagine: 521 - 528
SICI:
0749-6036(1997)22:4<521:ULVABS>2.0.ZU;2-J
Fonte:
ISI
Lingua:
ENG
Soggetto:
EMISSION;
Keywords:
GAAS/AL X GA1-XAS; UP-CONVERSION; BELOW-GAP STATES; BELOW-GAP EXCITATION;
Tipo documento:
Article
Natura:
Periodico
Citazioni:
16
Recensione:
Indirizzi per estratti:
Citazione:
N. Kamata et al., "UP-CONVERSION LUMINESCENCE VIA A BELOW-GAP STATE IN GAAS ALGAAS QUANTUM-WELLS/", Superlattices and microstructures, 22(4), 1997, pp. 521-528

Abstract

We observe a band-to-band photoluminescence (PL) of the well layers in GaAs/AlGaAs quantum well structures (h nu(p) = 1.56 eV) under below-gap excitation (BGE) with a Nd:YAG laser (h nu(B) = 1.17 eV) at 77 K. The origin of the up-conversion luminescence was inside the epitaxially grown well layers and is different from those reported in GaAs substrates. A detailed study of a two-wavelength excited PL was carried outby changing the density of both the BGE and the above-gap excitation (AGE) by a He-Ne laser (H nu(A) = 1.96 eV) individually. The up-conversion process corresponds to the increase in the PL intensity due to the BGE in two-wavelength excited FL, which reveals the mechanism of a cascade excitation via a below-gap state in quantum wells for the firstrime. A rate-equation analysis explained the measured BGE density dependence of the up-conversion luminescence. (C) 1997 Academic Press Limited.

ASDD Area Sistemi Dipartimentali e Documentali, Università di Bologna, Catalogo delle riviste ed altri periodici
Documento generato il 30/03/20 alle ore 00:05:31